Making of planar-butt field emission structures on silicon and investigation their characteristics
- 1 Ph.D. (Eng.), Researcher, Saratov Branch of the Kotel-nikov Institute of Radio Engineering and Electronics Russian Academy of Science
- 2 Ph.D. (Eng.), Senior Research Scientist, Saratov Branch of the Kotel-nikov Institute of Radio Engineering and Electronics Russian Academy of Science
- 3 Senior Engineer, Saratov Branch of the Kotel-nikov Institute of Radio Engineering and Electronics Russian Academy of Science
- 4 Dr.Sc. (Eng.), Professor, Head of the Laboratory, Saratov Branch of the Kotel-nikov Institute of Radio Engineering and Electronics Russian Academy of Science
Abstract
The planar-butt structures on silicon are fabricated. The field emission characteristics are investigated. The considerable influence to maximum current density depend on forming of emission windows are established. Investigated structures has perspective of applying for vacuum electronics devices are integrated to semiconductor structures.
How to cite
Нефедов Д.В., Суздальцев С.Ю., Шаныгин В.Я., Яфаров Р.К. Создание планарно-торцевых автоэмиссионных структур на кремнии и исследование их характеристик // Нелинейный мир. 2017. № 2. С. 12–13.
References
- Suzdalcev S.JU., Nefedov D.V., Ogurcov K.N., Burov A.M. // PZHTF. 2011. T. 37. Vyp. 18. S. 37-43.