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Articles by keyword tcad-моделирование
Sensory properties of fin surrounding gate nanotransistors

N.V. Masalsky

Federal State Institution «Scientific Research Institute for System Analysis of RAS» (Moscow, Russian)

Sensory properties of a complementary pair of silicon field-effect nanotransistors with cylindrical geometry

N.V Masalsky1

1 Federal State Institution “Scientific Research Institute for System Analysis of the Russian Academy of Sciences” (Moscow, Russia)

An effective method of pH-metry based on a complementary scheme of ion-sensitive nanotransistors

N.V. Masalsky1

1 Federal State Institution «Scientific Research Institute for System Analysis of the Russian Academy of Sciences» (Moscow, Russia)
1 Masal1960@yandex.ru