Journals
Books
Articles by keyword EEHEMT model
Simulation of static characteristics of the HEMT transistor

A.L. Khvalin1, V.M. Doroshenko2

1 National Research Saratov State University (Saratov, Russia)
2 Yuri Gagarin State Technical University (Saratov, Russia)
1 Khvalin63@mail.ru, 2 Dorvalentina9@gmail.com