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Articles by keyword 2d-уравнение Пуассона
Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile
N.V. Masalskii - Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru
Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru

Silicon non-uniformly doped nanotransistor biosensors

N.V. Masalsky – Ph.D. (Phys.-Math.), Leader Research Sceintist, Federal State Institution “Federal Scientific Center” Research Institute for System Research of the RAS" 

E-mail: volkov@niisi.ras.ru