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Articles by keyword пороговое напряжение
Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile
N.V. Masalskii - Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow. E-mail: volkov@niisi.ras.ru
Using of system analysis approaches for determining of object detection reliability of perimeter security radio devices
V.I. Volovach - Dr.Sc. (Eng.), Associate Professor, Head of Department «Information and Electronic Service», Volga Region State University of Service. E-mail: volovach.vi@mail.ru V.М. Artyushenko - Dr.Sc. (Eng.), Professor, Head of Department «Information Technology and Management Systems», Technological University («TU» GBOU VO MO) (Korolev). E-mail: artuschenko@mail.ru К.L. Samarov - Dr.Sc. (Phys.-Math.), Professor, Department «Mathematics and Natural Sciences », Technological University («TU» GBOU VO MO) (Korolev). E-mail: kimsamarov@yandex.ru I.М. Belyuchenko - Dr.Sc. (Eng.), Professor, Department «Information Technology and Management Systems», Technological University («TU» GBOU VO MO) (Korolev). E-mail: bill3705@yandex.ru N.А. Vasilyev - Dr.Sc. (Eng.), Professor, Department «Information Technology and Management Systems», Technological University («TU» GBOU VO MO) (Korolev). E-mail: cit@ktrv.ru
Effect of ion implantation and hot electrons on the threshold voltage of MOSFETs

N.V. Cherkesova1, G.A. Mustafaev2, A.G. Mustafaev3

1,2 Kabardino-Balkarian State University (Nalchik, Russia)

3 MIREA – Russian Technological University (Moscow, Russia)

1 natasha07_2002@mail.ru, 2 zoone@mail.ru, 3 mustafaev@mirea.ru