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Articles by keyword вольтамперные и затворные характеристики
Silicon transistor with the nanowire channel from non-uniformly doped silicon on insulator
S.V. Amitonov, D.E. Presnov, V.A. Krupenin
Set transistor from highly doped silicon on insulator
D. E. Presnov - Ph.D. (Phys.-Math.), Senior Research Scientist, Department of microelectronics, Skobeltsyn Institute of Nuclear Physics, M.V.Lomonosov Moscow State University. E-mail: denis.presnov@phys.msu.ru
S. V. Amitonov - Post-Graduate Student, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: sam-msu@yandex.ru
V.S Vlasenko - Head of Department of Research and Industrial Material Science, OPTEC LLC, Moscow, Russia. E-mail: vlasenko@optecgroup.com
V. A. Krupenin - Ph.D. (Phys.-Math.), Senior Research Scientist, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: vladimir.krupenin@phys.msu.ru
Set transistor from highly doped silicon on insulator
D. E. Presnov - Ph.D. (Phys.-Math.), Senior Research Scientist, Department of microelectronics, Skobeltsyn Institute of Nuclear Physics, M.V.Lomonosov Moscow State University. E-mail: denis.presnov@phys.msu.ru
S. V. Amitonov - Post-Graduate Student, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: sam-msu@yandex.ru
V.S Vlasenko - Head of Department of Research and Industrial Material Science, OPTEC LLC, Moscow, Russia. E-mail: vlasenko@optecgroup.com
V. A. Krupenin - Ph.D. (Phys.-Math.), Senior Research Scientist, Cryoelectronics Lab, Faculty of Physics, M.V.Lomonosov Moscow State University. E-mail: vladimir.krupenin@phys.msu.ru