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Articles by keyword рентгеновская рефлектометрия
Formation and structure of nanosized layer of silicon carbide on silicon by implantation of high doses of carbon ions
I.K. Beysembetov, K.Kh. Nusupov, N.B. Beysenkhanov, S.K.Zharikov, B.K. Kenzhaliev, T.K. Akhmetov