Analytical estimation of the parameters of optoelectronic device based on FTIROS
- 1 Dr. Sc. (Phys.-Math.), Professor, Department «Information security of automated systems», Yuri Gagarin State Technical University of Saratov, Honored Scientist of RF, Academic of RANS
- 2 Dr. Sc. (Eng.), Professor, Director of NIKA-Microwave, Ltd (Saratov), Honored Scientist of RF
- 3 Ph. D. (Phys.-Math.), Associate Professor, Department of Engineering Physics, Saratov State Agro University named after N.I. Vavilov
Keywords:
optical indicatorphase transitionthe energy barrierthermodynamicCarno-s diagramefficiencyentropy
Abstract
Mathematical modeling of thermodynamic process for determining parameters of optical indicators based on FTIROS was carried out. The value of the energy barrier for semiconductor - metal phase transition in the FTIROS material has been estimated. The efficiency and entropy change for the semiconductor - metal phase transition of this material has been estimated with the help of Carno-s diagram.
How to cite
Байбурин В.Б., Мещанов В.П., Кузнецов В.А. Аналитическая оценка параметров оптоэлектронных устройств на основе ФТИРОС // Радиотехника. 2016. № 7. С. 21–24.
References
- Bugaev A.A., Zakharchenja B.P., CHudnovskijj F.A. Fazovyjj perekhod metall-poluprovodnik i ego primenenie. L.: Nauka. 1979. 183 s.
- Meshhanov V.P.,Alaverdjan S.A., Kabanov I.N., Komarov V.V. Razrabotka i modelirovanie dvumernykh periodicheskikh struktur dlja uzkopolosnojj filtracii signalov // Radiotekhnika. 2014. № 10. S. 9−14.
- Kacnelson A.A., Olemskojj A.I. Mikroskopicheskaja teorija neodnorodnykh struktur. M.: MGU. 1987. 333 s.
- Rehdi Dzh. Dejjstvie moshhnogo lazernogo izluchenija. M.: Mir. 1970. 258 s.
- Ivanov M.A. Zavisimost temperatury fazovogo perekhoda v VO2 ot vsestoronnego davlenija // FTT.1964. № 6. S. 200−207.
- Ilinskijj A.V., Klimov V.A., KHanin S.A., SHadrin E.B. EHlektricheskie i opticheskie javlenija v diokside vanadija // EHksperimentalnaja fizika. 2005. S. 100−120.
Full text, PDF
350 ₽