Giant magnetoresistance in a many layers heterostructures GaAs/AlGaAs with a wide tunneling barrier
- 1 мл. науч. сотрудник, ИРЭ им. В.А. Котельникова РАН
- 2 д.ф.-м.н., гл. науч. сотрудник, ИРЭ им. В.А. Котельникова РАН
- 3 проф., Лаборатория сильных магнитных полей, Гренобль, Франция
Abstract
Terahertz plasmons in the grating-gate FET structures with two-dimensional electron channels are investigated.
The Ohmic resistance of heterostructures with a low, but wide barrier Al0.1Ga0.9As located between two quantum well GaAs is measured at in-plane magnetic fields B=0-9 T. The resistance increases in factor of 10 at magnetic fields from 0 to 5 T and in factor of 400 at B=0-9 T.
How to cite
Морозова Е.Н., Волков В.А., Портал Ж.К. Гигантское магнитосопротивление многослойных гетероструктур на основе GaAs/AlGaAs с широким туннельным барьером // Нелинейный мир. 2011. № 2. С. 107–108.
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