V.G. Tikhomirov

В.Г. Тихомиров

14 articles 2016–2023

2023

Reseach of the possibility of improving of biosensors sensitivity based on a gallium nitride nanoheterostructure of a transistor with high electron mobility for using as part of a multiparameter invasive complex Nanotechnology : the development , application - XXI Century, No. 4, 2023 pp. 25-29
The element base in the MIC version for radiometric microwave receivers used in agriculture Electromagnetic Waves and Electronic Systems, No. 5, 2023 pp. 24-31
Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits Radioengineering, No. 10, 2023 pp. 187-193
Microminiaturization of multichannel multi-frequency radiothermographs (part 2) Achievements of Modern Radioelectronics, No. 7, 2023 pp. 55-68
Microminiaturization of multichannel multi-frequency radiothermographs (part 1) Achievements of Modern Radioelectronics, No. 5, 2023 pp. 48-63
Heterostructure transistor for an energy-efficient low-noise radiothermograph amplifier based on monolithic integrated circuits Radioengineering, No. 3, 2023 pp. 166-173

2022

Research of the influence of manufacturing errors on the parameters of transistors for monolithic microwave integrated circuits and identification of key factors determining their stability as part of a miniature radiothermograph Nanotechnology : the development , application - XXI Century, No. 4, 2022 pp. 25-36
- Nanotechnology : the development , application - XXI Century, No. 2, 2022 pp. 18-22

2020

Simulation of the "soft breakdown" phenomenon in the microwave HEMT based on gallium nitride Nanotechnology : the development , application - XXI Century, No. 2, 2020 pp. 43-47

2017

The effect of low temperature annealing on the low-frequency and microwave transistors on the parameters of heterostructures AlGaN / GaN Nanotechnology : the development , application - XXI Century, No. 1, 2017 pp. 19-22

2016

Application of numerical modeling for evaluation of the influence of exploitation parameters and external impacts on the CVC of heterostructure field effect transistor used in radioelectronic equipment for space application Nanotechnology : the development , application - XXI Century, No. 4, 2016 pp. 49-52
Dependence analysis of the GaN HEMT parameters on the thickness AlGaN barrier layer by numerical simulation Nanotechnology : the development , application - XXI Century, No. 2, 2016 pp. 37-39
Contemporary trends biosensors diagnosis in vivo Nanotechnology : the development , application - XXI Century, No. 2, 2016 pp. 20-28
Research of volt-ampere characteristics multiparametric biosensor without gate by mathematical modeling method Nanotechnology : the development , application - XXI Century, No. 1, 2016 pp. 15-20