Research of volt-ampere characteristics multiparametric biosensor without gate by mathematical modeling method

A.G. Gudkov; V.N. Viyuginov; V.G. Tihomirov; A.A. Zybin

Research of volt-ampere characteristics multiparametric biosensor without gate by mathematical modeling method

A.G. Gudkov¹, V.N. Viyuginov², V.G. Tihomirov³, A.A. Zybin⁴

research article Pages: 15-20

¹ Dr.Sc. (Eng.), Professor, Department of Instrumentation Technology, MSTU n.a. N.E. Bauman; General Director, OOO «NPI FIRMA «HYPERION» (Moscow)
² Ph.D. (Phys.-Math.), Director, CJSC «Svetlana-Elektronpribor» (St.-Petersburg)
³ Ph.D. (Phys.-Math.), CJSC «SvetlanaElektronpribor» (St.-Petersburg)
⁴ Head of Laboratory, CJSC «SvetlanaElektronpribor» (St.-Petersburg)

Keywords: multiparameter biosensors HEMT transistor-mathematical modeling of current-voltage characteristics

Abstract

This article illustratesthe issues of numerical simulation of the impact of certain external influences on the VAC field-effect transistors on basis of heterostructures AlGaN / GaN (HEMT). A mathematical model allowing predict the behavior of the drain current as a function of changes in the terms on the surface of the heterostructure in the shutter area is completed.

Numerical simulation of the impact of certain external influences on the VAC field-effect transistors on basis of heterostructures AlGaN / GaN (HEMT)is done. Numerical calculations suggest that the influence of the set of external factors, for example the location of the electrolyte with a certain pH value in the area of the shutter, on the test instrument VAC exists and the dependence is monoton-ic.Furthermore, studies allow to say the possibility of the effective use of numerical modeling of HEMT transistors based on gallium nitride to optimize structure of the biosensor.

Numerical calculations suggest that the influence of the set of external factors (the location of the electrolyte with a certain pH value in the shutter area) on the test device VAC exists and the dependence is monotonic. More research is needed for directional changes in most of the heterostructure and the overall design of the biosensor to increase the sensitivity in these cases and expanding the range of recognizable substances.

How to cite

Гудков А.Г., Вьюгинов В.Н., Тихомиров В.Г., Зыбин А.А. Исследование методом математического моделирования ВАХ многопараметрических биосенсоров на основе HEMT-транзисторов без затвора // Нанотехнологии: разработка, применение - XXI век. 2016. № 1. С. 15–20.

References

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Wang H.T., Kang B.S., Chancellor T.F. (Jr.), Lele T.P., Tseng Y., Ren F., Pearton S.J., Dabiran A., Osinsky A. Chow P.P. Selective detection of Hg(II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors // Electrochem. Solid. State. Lett. 2007. 10:J150-3.
Steinhoff G., Hermann M., Schaff W.J., Eastmann L.F., Stutzmann M., and Eickhoff M. // Appl. Phys. Lett. 2003. 83. 177.
Kang, Wang, Ren, Hlad, Gila, Abernathy, Pearton, Li, Low, Lin, Johnson, Rajagopal, Roberts, Piner, and Linthicum. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors // Journal of Electronic Materials. 2008. V. 37. № 5. DOI: 10.1007/s11664-007-0298-y.

[1] Ambacher O., Eickhoff M., Steinhoff G., Hermann M., Gorgens L., and Werss V. // Proc. ECS 214. 2002. 27.

[2] Neuberger R., Muller G., Ambacher O., Stutzmann M. // Phys. Status. Solidi. A. 2001. 185:85.

[3] Schalwig J., Muller G., Ambacher O., Stutzmann M. // Phys. Status. Solidi. A. 2001. 185:39.

[4] Steinhoff G., Hermann M., Schaff W.J., Eastman L.F., Stutzmann M., Eickhoff M. // Appl. Phys. Lett. 2003. 83:177.

[5] Eickhoff M., Neuberger R., Steinhoff G., Ambacher O., Muller G., Stutzmann M. // Phys. Status. Solidi. B. 2001. 228:519.

[6] Schalwig J., Muller G., Eickhoff M., Ambacher O., Statzmann M. // Sens. Actuat. B. 2002. 81:425.

[7] Stutzmann M., Steinhoff G., Eickhoff M., Ambacher O., Nobel C.E., Schalwig J., et al. // Diamond. Rel. Mater. 2002. 11:886.

[8] Kang B.S., Wang H.T., Ren F., Pearton S.J.Electrical detection of biomaterials using AlGaN/GaN HEMTs // J. Appl. Phys. 2008. 104(8):031101

[9] Tikhomirov V.G., Maleev N.A., Kuzmenkov A.G., Solovev JU.V., Gladyshev A.G., Kulagina M.M., Zemljakov V.E., Dudinov K.V., JAnkevich V.B., Bobyl A.V., Ustinov V.M. // FTP. 2011. 45(10), 1405.

[10] Tikhomirov V., Zemlyakov V., Volkov V., Parnes Ya., Vyuginov V., Lundin W., Sakharov A., Zavarin E., Tsatsulnikov A., Cherkashin N., Mizerov M., and Ustinov V. // Semiconductors. 2016. V. 50. №. 2. R. 244-248.

[11] Hu W.D., Chen X.S., Quan Z.J., Xia C.S., Lu W., Ye P. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects // J. Appl. Phys. 2006. 100:074501. http://dx.doi.org/10.1063/1.2354327.

[12] Kang B.S., Wang H.T., Ren F., and Pearton S.J. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors // Journal of Applied Physics. 2008. 104. 031101; doi: 10.1063/1.2959429

[13] Hung S.C., Wang Y.L., Hicks B., Pearton S.J., Ren F., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., Linthicum K.J., and Chia G.C. Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection // Electrochemical and Solid-State Letters. 2008. 11(9). H241-H244.

[14] Wang H.T., Kang B.S., Chancellor T.F. (Jr.), Lele T.P., Tseng Y., Ren F., Pearton S.J., Dabiran A., Osinsky A. Chow P.P. Selective detection of Hg(II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors // Electrochem. Solid. State. Lett. 2007. 10:J150-3.

[15] Steinhoff G., Hermann M., Schaff W.J., Eastmann L.F., Stutzmann M., and Eickhoff M. // Appl. Phys. Lett. 2003. 83. 177.

[16] Kang, Wang, Ren, Hlad, Gila, Abernathy, Pearton, Li, Low, Lin, Johnson, Rajagopal, Roberts, Piner, and Linthicum. Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors // Journal of Electronic Materials. 2008. V. 37. № 5. DOI: 10.1007/s11664-007-0298-y.