В.Г. Шадров – к.ф.-м.н., вед. науч. сотрудник, 

ГНПО «НПЦ НАН Беларуси по материаловедению»

А.Э. Дмитриева – мл. науч. сотрудник, 

ГНПО «НПЦ НАН Беларуси по материаловедению»

А.В. Болтушкин – к.ф.-м.н., вед. науч. сотрудник, 

ГНПО «НПЦ НАН Беларуси по материаловедению»

E-mail: nemtsevich@ifttp.bas-net.by

Постановка проблемы. Лавинообразный рост информационных потоков, а также требование повышения производительности вычислительных систем создает запрос на надежные сверхбыстрые накопители информации.

Цель. Проанализировать основные тенденции развития материалов и параметров устройств хранения информации на основе магнитных технологий.

Результаты. Проведен анализ основных параметров и материалов устройств хранения информации на основе магнитных технологий: жестких магнитных дисков и магнитных лент, магниторезистивной оперативной памяти, включая трековую память и память на скирмионах, а также возможность антиферромагнитной технологии хранения информации.

Практическая значимость. Магниторезистивная память с переключением ячейки памяти с помощью передачи спинового момента потенциально способна стать универсальной памятью и изменить архитектуру компьютеров.

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