350 руб
Журнал «Успехи современной радиоэлектроники» №6 за 2011 г.
Статья в номере:
Перспективы создания СВЧ-элементов на основе полупроводниковых алмазных материалов
Ключевые слова: СВЧ-полупроводниковые структуры алмазные диоды алмазные полевые транзисторы с поверхностным каналом на основе водорода алмазные полевые транзисторы с  -каналом легированным бором
Авторы:
А.А. Алтухов - к.т.н., ст. науч. сотрудник, ООО ПТЦ «УралАлмазИнвест» А.С. Бугаев - академик, зав. лабораторией, ФИРЭ им. В.А. Котельникова РАН Ю.В. Гуляев - академик, директор, ИРЭ им. В.А. Котельникова РАН К.Н. Зяблюк - к.ф.-м.н., вед. науч. сотрудник, ООО ПТЦ «УралАлмазИнвест» А.Ю. Митягин - д.ф.-м.н., гл. науч. сотрудник, профессор, ФИРЭ им. В.А. Котельникова РАН Г.В. Чучева - д.ф.-м.н., ученый секретарь, ФИРЭ им. В.А.Котельникова РАН
Аннотация:
Рассмотрены наиболее перспективные алмазные полевые транзисторы с поверхностным каналом на основе водорода и транзисторы с -каналом, легированным бором. Показано преимущество данных транзисторов перед транзисторами на основе GaAs и GaN. Отмечено, что перспектива широкого освоения подобных устройств связана разработкой и созданием новой нанометровой технологии.
Страницы: 3-18
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