Journals
Books
Articles by keyword Non-volatile memory
Resistive switching effect in thin films of hafnium oxide in TiN/Hf<sub>x</sub>Al<sub>1-x</sub>O<sub>y</sub>/HfO<sub>2</sub>/TiN nanostructures
S.A. Zaitsev - Ph.D. (Phys.-Math.), Research Scientist, Moscow Institute of Physics and Technology (State University)
O.M. Orlov - Ph.D. (Eng.), Associate Professor, Head of Laboratory, Molecular Electronics Research Center
Е.S. Gornev - Dr.Sc. (Phys.-Math.), Professor, Chief Research Scientist, Molecular Electronics Research Center
K.V. Egorov - Post-graduate Student, Moscow Institute of Physics and Technology (State University)
R.V. Kirtaev - Student, Moscow Institute of Physics and Technology (State University)
A.M. Markeev - Ph.D. (Phys.-Math.), Senior Research, Moscow Institute of Physics and Technology (State University)
A.V. Zablotskiy - Ph.D. (Phys.-Math.), Associate Professor, Moscow Institute of Physics and Technology (State University)
Research of storage elements based on ferroelectric for the production of non-volatile memory (FeRAM)

I.V. Orekhova1, A.Yu. Azov2, G.V. Timofeeva3, S.D. Serov4, I.V. Baranova5, A.V. Plotnov6

1–6 FSUE RFNC «All-Russian Research Institute of Experimental Physics» (Sarov, Russia)
1 ivstepanova@vniief.ru, 2 aazov@niiis.nnov.ru, 3 gtimofeeva@niiis.nnov.ru, 4 sdserov@vniief.ru, 5 petreeva@mail.ru, 6 aplotnov@niiis.nnov.ru