350 rub
Journal Science Intensive Technologies №2 for 2013 г.
Article in number:
Research of influence of quality of materials on quality of microcircuits
Authors:
V.K. Doroshevich
Abstract:
The refusals caused by a semi-conductor material, make about 6-8 % from the general number of refusals, therefore improvement of quality of a semi-conductor material represents the important problem.
Norms on the maintenance impurity are established in specifications for concrete marks of silicon, taking into account thus as technological opportunities of reduction of the maintenance of these impurity, and their influence on characteristics microcircuit.
Prominent feature of processing of plates and structures is that in technological process of manufacturing microcircuit they are objects of group processing and group application.
Introduction of group parameters of quality of microcircuits is necessary.
Group characteristics and parameters of quality, can reflect a degree of uniformity of parameters of plates and structures on the area and in a party of microcircuits, allow to define and establish at a design stage optimum for concrete group of plates a technological mode of their processing from the point of view of reception of the maximal output(exit) of suitable microcircuits.
On the basis of it the return problem - an estimation of quality and efficiency of designing microcircuits can be solved.
Pages: 15-17
References
- Справочник. Анализ отказов и контроль технологических операций производства интегральных микросхем. 22 ЦНИИИ МО РФ. 1983.
- тчет о НИР «Исследование путей совершенствования системы обеспечения качества электрорадиоизделий военного назначения». 22 ЦНИИИ МО РФ. 1987 .
- Отчет о НИР «Исследование путей совершенствования системы обеспечения и контроля качества электрорадиоизделий военного назначения», «Примыкание-1». Инв. 475. 22 ЦНИИИ МО РФ. 1989.
- Дорошевич В.К. Влияние качества материалов на качество микросхем // Материалы Междунар. научно-технич. конф. «Фундаментальные проблемы радиоэлектронного приборостроения». Москва. 25-28 октября 2005 г.