A.V. Korolev1, G.A. Gudkov2, S.V. Chizhikov3

1 Bauman Moscow State Technical University (Moscow, Russia)
2,3 Ltd. Hyperion (Moscow, Russia)
1 teleret@mail.ru, 3 chigikov95@mail.ru

Obtaining high levels of output power of solid-state amplifiers is possible only using the summation of the powers of many transistors. Since the gain of individual transistors is quite small, multi-stage circuits are used in such amplifiers. The final choice of the structure and design of such amplifiers depends on many factors, such as reliability, power added efficiency, manufacturability, weight and size. In phased array radars, the lower gain limit is determined by the output if devices which control the amplitude-phase distribution in the aperture of the array, therefore, when developing an amplifier system, the maximum allowable power should be considered for the elements that are used to set the required phase and amplitude. A set of issues related to the analysis of the structure of the amplifier system and the assessment of its mass is considered. To increase the clarity and generality of the amplifier system analysis, the concepts of evaluated and structural unit amplifier modules are used. The block diagram of the amplifier has been calculated, and its relative mass has been determined with two ratios of the mass of the amplifier cell and the mass of the two-channel power splitter-combiner.

Korolev A.V., Gudkov G.A. Evaluation of the mass-dimensional characteristics of transistor power amplifiers with power addition. Nanotechnology: development and applications – XXI century. 2025. V. 17. № 4. P. 38–45. DOI: https://doi.org/10.18127/ j22250980-202504-04 (in Russian)

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