350 rub
Journal №1 for 2016 г.
Article in number:
Basics of solutions preparation for nanoporous polymethylsilsesquioxane sol-gel films
Authors:
R.N. Nenashev - Post-graduate Student, Moscow Technological University (MIREA). E-mail: nenashev@mirea.ru N.M. Kotova - Senior Engineer, Moscow Technological University (MIREA). Е-mail: kotova1953@yandex.ru
Abstract:
The basics of methyltrimethoxysilane (MTMS) hydrolisis and condensation processes during sol-gel nanoporous polymethylsilsesquioxane thin films preparation are considered. Special attention was paid to an effect of acid to MTMS molar ratio on rates and mechanisms of hydrolysis and condensation reactions, as well as to an effect of water to MTMS molar ratio on polymer structure. It is shown, that selection of the optimum PMSSQ solution synthesis conditions produces films with the desired dielectric properties (ε = 2,75). This material can be used as a matrix in the course of preparation of nanoporous dielectric films with ε ≤ 2,0 by evaporation-induced self-assembly technique with the use of surface active agent as porogen. This low k films are candidates for interlevel dielectric in the state-of-the-art very large-scale integration multilevel metallization.
Pages: 27-35
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