350 rub
Journal №3 for 2012 г.
Article in number:
Effect of thickness of nanoscale ferroelectric films on the hysteresis characteristics of the MDM-structures
Keywords: Исследования показали что при уменьшении толщины сегнетоэлектрических пленок в структурах металл/сегнетоэлектрик/металл уменьшаются остаточная поляризация и крутизна петель диэлектрического гистерезиса в тоже время напряженность коэрцитивного поля возрастает. Экспериментальные результаты находятся в хорошей корреляции с моделью нарушенного слоя на поверхности раздела электрод/пленка ЦТС.
Authors:
Yu.V. Podgorny, K.A. Vorotilov, A.N. Lantsev, D.S. Seregin, A.S. Sigov
Abstract:
An effect of the thickness of ferroelectric sol-gel PZT films on the dielectric hysteresis behavior is studied. The films are produced by sol-gel method by layer-by-layer deposition on Si / SiO2(300 nm) / TiO2(10 nm) / Pt(150 nm) substrates at the crystallization temperature of 600 ºC. The thickness of one layer is about 32 nm and thickness of the samples of studied ferroelectric Pb(Zr0.48Ti0.52)О3 films have ranged between 95 nm to 340 nm. Studies have shown that with decreasing film thickness there is a decrease of remanent polarization and the steepness of the dielectric hysteresis loops, as well as the growth of the coercive field of PZT films. The film thickness has no systematic effect on the displacement of the hysteresis loop. Experimental results have a good correlation with the damage layer model at the PZT/Pt interface: a dielectric nature of this layer results in a decrease of switchable polarization and the injection of charge carriers at the trapped states in ferroelectric causes the appearance of an appropriate bias voltage.
Pages: 16-20
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