M.V. Inyukhin - Process Engineer, LLC «Ecolum-Voskhod» (Kaluga) E-mail: michael1@kaluga.ru A.P. Korzhavyi - Honored Scientist of RF, Dr. Sc. (Eng.), Professor, Kaluga branch of the Bauman MSTU E-mail: fn2kf@list.ru

In just a few decades, the development of semiconductor electronics, there were several areas: analog, digital, opto-electronics, in-tegrated circuits, microwave electronics, power electronics, and others, each with its own specific requirements and challenges. One such problem is the removal and dissipation of heat from hot chips. Effective heat removal is particularly important for: power devices, microwave electronics, integrated circuits and optoelectronic devices, where the power density emitted per unit area amounts to several tens of kW/cm2. The general solution of the problem of overheating electronic devices is: developing optimal packages, reducing the number of thermal layers between chip and heat sink as well as the choice of materials with acceptable thermal parameters, for example, with a combination of high thermal conductivity and coefficient of thermal linear expansion (CTE), consistent with a chip. In this paper, the authors considers the choice of perspective heat sinks based on the requirements for enclosures electronic devices and materials for their manufacture. The parameters of commonly used materials and heat sink materials marked with the most suitable properties and characteristics. Shows the best option for the heat sink materials are pseudoalloys composition of tungsten-copper. The parameters of the serial composition of the materials W-Cu different manufacturers. The analysis of the main requirements for enclosures electronic devices and heat sink materials for their production shows in the near future alternatives available pseudoalloys tungsten-copper with respect to of SiC-electronics is not expected as promising heat sink materials are difficult to manufacture and is expensive, and their performance characteristics not well understood.

 

1. Ponomarev V.A., JArancev N.V. Poroshkovye materialy dlja izdelijj ehlektronnojj tekhniki / Pod red. A.P. Korzhavogo. M.: Izd-vo MGTU im. N.EH. Baumana. 2014. 304 s.
2. Injukhin M.V., Korzhavyjj A.P., Prasickijj G.V. Parametry i tekhnika poluchenija teplootvodjashhikh materialov dlja poluprovodnikovykh priborov // Naukoemkie tekhnologii. 2014. T. 15. № 2. S. 10−19.
3. Prasickijj V.V. Nauchno-tekhnologicheskie aspekty proizvodstva kompozicionnykh materialov dlja teplootvodjashhikh i konstrukcionnykh ehlementov poluprovodnikovojj i vakuumnojj tekhniki // Naukoemkie tekhnologii. 2014. T. 15. № 10. S. 16−20.
4. Korzhavyjj A.P., Marin V.P., Sigov A.S. Nekotorye aspekty sozdanija tekhnologijj i konstrukcijj izdelijj kvantovojj ehlektroniki // Naukoemkie tekhnologii. 2002. T. 3. № 4. S. 20−31.
5. Prasickijj V.V., Prasickijj G.V., Nikiforov K.G., ZHdanov S.M. Fiziko-tekhnologicheskie faktory obespechenija kachestva kompozicionnykh materialov, poluchaemykh metodom prokatki poroshkov // Naukoemkie tekhnologii. 2015. T. 16. № 9. S. 38−46.
6. GeneSiC Semiconductor, Inc. Normally-OFF Silicon Carbide Junction Transistor 2N7640-GA // URL = http://www.genesicsemi .com/images/hit_sic/sjt/2N7640-GA.pdf.
7. Bussarakons T. International Rectifier. Hermetic Surface-Mount Discrete Semiconductor, Solutions to Assembly Integration. URL = http://www.irf.com/technical-info/appnotes/an-1016.pdf.
8. Patent USA № 2010/0092327. 15 Apr 2010. Torrey Hills Technologies, LLC. Process for Making Copper Tungsten and Copper Molybdenum Composite Electronic Packaging Materials.
9. Zweben C. Advanced Thermal Management Materials for Electronics and Photonics // Advancing Microelectronics. 2010. V. 37. № 4. P. 14−19.
10. Bodnar D. Metallicheskie i kompozitnye teploprovodjashhie materialy dlja moshhnykh poluprovodnikovykh korpusov // Komponenty i tekhnologii. 2014. № 12. S. 155−160.
11. Lebedev A., Sbruev S. SiC-ehlektronika: proshloe, nastojashhee, budushhee // EHlektronika: Nauka, Tekhnologija, Biznes. 2006. № 5. S. 28−41.
12. Petropavlovskijj JU. Sovremennye poluprovodnikovye pribory na osnove karbida kremnija firmy ROHM Semiconductor // Komponenty i tekhnologii. 2011. № 4. S. 108−112.