B.I. Yakubovich

Electric fluctuations in the semiconductors, caused by capture of carriers of a charge by defects of structure are considered. Capture of carriers by defects is a source of electric noise of several types. Character of the noise caused by traps, the formed defects of structure, is in many respects defined by a kind of traps, their concentration, statistical properties of processes of capture and emission on traps. Distinctions, mainly on these indicators lead to different types of the electric noise having a uniform source - capture of carriers by traps. In this connection electric fluctuations in the semiconductors, caused by traps are analyzed. On purpose to give enough general description of such fluctuations. Capture of carriers of a charge by traps causes fluctuations of number of free carriers and as a result electric noise in semiconductors. The following rather general case is considered. Concentration of free carriers and traps are in any ratio. There are statistical connections between consecutive events fluctuation process, statistical connections are set in a general form. Considered fluctuations represent random sequence of pulses in which duration of a pulse is statistically connected with its amplitude, and amplitude is statistically connected with amplitude of previous pulse. The spectrum of fluctuations is calculated. Expression for the spectrum fluctuations of number of free carriers in semiconductors is found. As a result expression for spectrum of electric fluctuations in semiconductors is obtained. The universal quantitative description of electric fluctuations in the semiconductors caused by traps is as a result given. The formula of a general form for spectrum of electric fluctuations is calculated. The obtained formula can be used for the description of electric noise in numerous semiconductor materials in various special cases.