Non-volatile memory cells diagnostics by scanning contact capacitance mode
- 1 аспирант, Московский государственный университет информационных технологий, радиотехники и электроники (МИРЭА)
Keywords:
contact scanning capacitance microscopyflash cell failure analysisscanning probe microscopyC V characteristicscantile-ver
Abstract
The article presents investigation of depending contact sensitivity on cantilevers tip radius and material. Charge resolution ability of scanning capacitance microscopy mode and its lateral resolution in flash cell failure analysis are defined.
Analysis of the results showed the ability to apply the method in the diagnosis of memory cells with charge 1.6-10−16 C.
How to cite
Шиколенко Ю.Л. Диагностика дефектов ячеек энергонезависимой памяти методом контактной сканирующей емкостной микроскопии // Наукоемкие технологии. 2016. № 1. С. 26–29.
References
- Bloom I., Pavan P., Eitan B. NROM - A New Non-Volatile Memory Technology: From Device to Products // Microelectronic Engineering. November 2001. V. 59. P. 213−223.
- Nonvolatile Memory Technologies with Emphasis on Flash / Edited by J.E. BrewerandM. Gill. InstituteofElectricalandElectronicsEngineers. Inc. 2008. P. 445−591.
- Instrukcija «Kontaktnaja Skanirujushhaja Emkostnaja Mikrosokpija» [EHlektronnyjj resurs] // Kompanija NT MDT [Oficialnyjj sajjt].URLhttp://www.ntmdt.ru/support.html (data obrashhenija: 1.04.2015).
- Sacha G., Verdaguer A., Martines J., Ogletree D., Saenz J., Salmeron M. Effective tip radius in electrostatic force microscopy // Appl Phys Lett. 2005. 86:123101. doi:10.1063/1.1884764.