Design of the onboard multichannel GNSS-receivers components for all types orbits spacecrafts on a basis arsenide-gallium technology of a domestic production

S.G. Kochura; N.A. Testoedov; W.N. Shkolny; S.B. Suntsov; A.V. Kondratenko; K.A. Alekseev; V.M. Karaban

Design of the onboard multichannel GNSS-receivers components for all types orbits spacecrafts on a basis arsenide-gallium technology of a domestic production

S.G. Kochura¹, N.A. Testoedov², W.N. Shkolny³, S.B. Suntsov⁴, A.V. Kondratenko⁵, K.A. Alekseev⁶, V.M. Karaban⁷

research article Pages: 39-43

¹ Ph. D. (Eng.), Deputy General Product Engineer, JSC «Academician M.F. Reshetnev «Information Satellite Systems» (Zheleznogorsk)
² Dr. Sc. (Eng.), Professor, Corresponding Member, Head of Department, Siberian state aerospace university
³ Main Product Engineer, JSC «Academician M.F. Reshetnev «Information Satellite Systems» (Zheleznogorsk)
⁴ Ph. D. (Eng.), Head of Department, JSC «Academician M.F. Reshetnev «Information Satellite Systems» (Zheleznogorsk)
⁵ Junior Research Scientist, Tomsk State University of Control Systems and Radioelectronics
⁶ laboratory assistant, Tomsk State University of Control Systems and Radioelectronics
⁷ Ph. D. (Phys.-Math.), Senior Research Scientist, Head of Laboratory, Tomsk State University of Control Systems and Radioelectronics

Keywords: semiconductors arsenide-gallium technology monolithic integrated circuits radiation hardness spacecraft navigation receiver GNSS-signals on-off switch low-noise amplifier FETs Schottky\'s gate

Abstract

The technical solutions design of radiation-hardened monolithic integrated circuits (MIC) on-off switch and low-noise amplifier (LNA) of L-band is presented. The design was conducted on the basis of 0,15 microns pHEMT arsenide-gallium technology of own production for application as a part of on-board receivers of the global navigation satellite systems (GNSS) signals of all types orbits spacecraft-s for their autonomous coordinate and time providing.

How to cite

Кочура С.Г., Тестоедов Н.А., Школьный В.Н., Сунцов С.Б., Кондратенко А.В., Алексеев К.А., Карабан В.М. Разработка компонентов бортовых многоканальных ГНСС приемников космических аппаратов всех типов орбит на основе арсенид-галлиевой технологии отечественного производства // Наукоемкие технологии. 2015. № 3. С. 39–43.

References

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[1] HMC190AMS8/190AMS8E - GaAsMMICSPDTSwitchDC‑3 Ghz [EHlektronnyjj resurs] URL: http://www.radiant.su/other/hittite/pdf/hmc190ams8.pdf.

[2] GaAs MIS dvukhpozicionnogo SVCH kommutatora MP202 [EHlektronnyjj resurs] URL: http://www.micran.ru/productions/MIS/switches/MP202.

[3] Petrova T.S., Eremina E.L., Ignatev M.G., Kozlova L.A., Barov A.A. Monolitnaja integralnaja skhema dvukhpozicionnogo SVCH kommutatora na GaAs // Izvestija Tomskogo politekhnicheskogo universiteta. 2006. T. 309. № 8. S. 172−175.

[4] Barov A.A., Gjunter V.JA., Ignatev M.G., Petrova T.S. Upravljajushhie monolitno-integralnye skhemy SVCH na baze GaAs PTSH // Materialy 15‑jj Mezhdunar. Krymskojj konf. «SVCH-tekhnika i telekommunikacionnye tekhnologii» (KryMiKo-2005) (Sevastopol, 12−16 sentjabrja 2005 g.). Sevastopol: Veber. 2005. S. 175−176.

[6] Polevye tranzistory na arsenide gallija. Principy raboty i tekhnologija izgotovlenija. Per. s angl. / Pod red. DiLorenco D.V., Kandeluola D.D. M.: Radio i svjaz. 1988. 496 s.

[7] Gutmann R.J., Fryklund D.J. Characterization of Linear and Nonlinear Properties of GaAs MESFET-s for Broad-Band Control Applications // Transactions on Microwave Theory and Techniques. 1987. V. 35. № 5. P. 516−521.

[8] Zykov D.D., Matveev V.V., Nechaev K.A., Karaban V.M. Povyshenie kachestva produkcii posredstvom ispolzovanija prichinno-sledstvennojj diagrammy v komplekse s informacionnojj sistemojj upravlenija poluprovodnikovym proizvodstvom // Dokl. TUSUR. 2013. № 4(30). S. 173−176.

[9] Jain N., Gutmann R.J.ModelingandDesignofGaAsMESFETControlDevicesforBroad-BandApplications // TransactionsonMicrowaveTheoryandTechniques. 1990. V. 38. № 2. P. 109−117.

[10] HMC618LP3/618LP3E - GaAsSMTpHEMTLowNoiseAmplifier, 1,2−2,2 GHz[EHlektronnyjj resurs] URL: http://www.radiant.su/other/hittite/pdf/hmc618lp3.pdf.

[11] GaAs MIS shirokopolosnogo usilitelja 1−4 GGc MR502 [EHlektronnyjj resurs] URL: http://www.micran.ru/productions/MIS/amplifiers/MP502.

[12] Mokerov V.G., Babak L.I., Fedorov JU.V.i dr. Razrabotka komplekta monolitnykh maloshumjashhikh usilitelejj KH‑diapazona na osnove 0,15 mkm GaAspHEMT-tekhnologii // Doklady TUSURa. 2010. № 2(22). S. 105−117.

[13] Arykov V.S., Barov A.A., Kondratenko A.V.GaAspHEMT MIS maloshumjashhego usilitelja KH‑diapazona // Materialy 21‑jj Mezhdunar. Krymskojj konf. «SVCH-tekhnika i telekommunikacionnye tekhnologii». Sevastopol: Veber. 2011. T. 1. S. 159−160.

[14] Tekshev V.B. Dvukhtranzistornyjj SVCH-usilitel s minimalnym koehfficientom shuma i soglasovannym vkhodom i vykhodom // Obshhie voprosy radioehlektroniki. 1990. № 15. S. 16−23.

[15] Mironov M.A., Bashaev A.V., Polosin S.A. Kontrol celostnosti v bortovykh sistemakh funkcionalnogo dopolnenija globalnykh navigacionnykh sputnikovykh sistem // Radiotekhnika. 2004. № 7.

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