Relaxation radiative processes in thin-film electroluminescent structures

M.K. Samokhvalov

Relaxation radiative processes in thin-film electroluminescent structures

research article UDC 628.9.038 Pages: 103-108

¹ Dr.Sc.(Phys.-Math.), Professor, Department «Electronic Instrumentation Design and Technology», Ulyanovsk State Technical University

Keywords: thin-film electroluminescent structure waves of brightness activators impact excitation cross sections constant decay time of luminescence

Abstract

The relaxation of the radiation brightness (brightness waves) in thin-film electroluminescent structures is studied. Based on the model of direct impact excitation of activator centers in the luminophore, the relations connecting the luminance brightness with the conditions of excitation of radiative structures are obtained. It is shown that it is possible to calculate the main parameters characterizing the processes of interaction of charge carriers accelerated by the electric field with the center of luminescence in the luminophore and photon radiation by excited atoms by measuring the brightness waves and the active current in thin-film structures. The values of activator parameters (impact excitation cross sections and constant decay time of luminescence) for various activators in zinc sulfide films doped with manganese and fluoride terbium, samarium and tullium are determined.

How to cite

Самохвалов М.К. Релаксационные излучательные процессы в тонкопленочных электролюминесцентных структурах // Радиотехника. 2018. № 6. С. 103–108.

References

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Samoxvalov M.K., Taxtenkova M.O. Vol't-yarkostny'e xarakteristiki e'lektrolyuminesczentny'x plenok ZnS:Mn // Izvestiya VUZov. Ser.E'lektronika. 2009. № 5. S. 3−6.
Samoxvalov M.K., Davy'dov R.R., Xadiullin E'.I. Opredelenie secheniya udarnogo vozbuzhdeniya aktivatorov v lyuminofore na osnove izmerenij vol't-yarkostny'x xarakteristik tonkoplenochny'x e'lektrolyuminesczentny'x struktur // Pis'ma v ZhTF. 2001. T. 27. № 8. S. 74−80.

[1] Samoxvalov M.K. E'lementy' i ustrojstva optoe'lektroniki. Izd. 2-e, pererab. i dop. Ul'yanovsk: UlGTU. 2015. 223 s.

[2] Technology. Thin Film Electroluminescent Displays. Beneq Products Oy. Finland. 2013. URL = http://lumineq.com/en/technology. Zagl. s e'krana.

[3] EL-Tonkoplenochny'e e'lektrolyuminesczentny'e displei. ZAO «Favorit - e'lektronnaya kompaniya». 2010. URL = http://www.favoritec.ru/files/catalog/lcd/EL_Catallogue.pdf. Zagl. s e'krana.

[4] Georgobiani A.N., Pipinis P.A. Tunnel'ny'e yavleniya v lyuminesczenczii poluprovodnikov. M.: Mir. 1994. 224 s.

[5] Vlasenko N.A. Tonkoplenochny'e e'lektrolyuminesczentny'e izluchateli // Fizicheskie osnovy' poluprovodnikovoj e'lektroniki. Kiev: Naukova dumka. 1985. S. 254−268.

[6] Samoxvalov M.K. Tonkoplenochny'e e'lektrolyuminesczentny'e istochniki izlucheniya. Ul'yanovsk: UlGTU. 1999. 117 s.

[7] Zabudskij E.E., Samoxvalov M.K. Modelirovanie vremenny'x xarakteristik yarkosti tonkoplenochny'x e'lektrolyuminesczentny'x struktur // Pis'ma v ZhTF. 2000. T. 26. № 1. S. 56−60.

[8] Samoxvalov M.K., Taxtenkova M.O. Vol't-yarkostny'e xarakteristiki e'lektrolyuminesczentny'x plenok ZnS:Mn // Izvestiya VUZov. Ser.E'lektronika. 2009. № 5. S. 3−6.

[9] Samoxvalov M.K., Davy'dov R.R., Xadiullin E'.I. Opredelenie secheniya udarnogo vozbuzhdeniya aktivatorov v lyuminofore na osnove izmerenij vol't-yarkostny'x xarakteristik tonkoplenochny'x e'lektrolyuminesczentny'x struktur // Pis'ma v ZhTF. 2001. T. 27. № 8. S. 74−80.