Microwave monolitic integrated curcuit switche on the SiC pin diodes
- 1 к.ф.-м.н., директор ЗАО «Светлана-Электронприбор» (Санкт-Петербург)
- 2 д.т.н., профессор, кафедра «Технологии приборостроения», МГТУ им. Н.Э. Баумана
- 3 аспирант, кафедра «Технологии приборостроения», МГТУ им. Н.Э. Баумана
- 4 начальник лаборатории, ЗАО «Светлана-Электронприбор» (Санкт-Петербург)
Abstract
The efficiency microwave monolitic integrated curcuits switches, working in the extreme conditions of the destabilizing factors (tem-perature changes and ionizing radiation), inherent to outer space, depends on performance improving, energy efficiency and reliability of solid-state element base, the ability of long-term operation in harsh environments.
The great superiority of the main operational parametres of the switch on the SiC pin diodes for the dm- and sm-wavelength ranges, comparing with switch on the Si pin diodes are presented.
The main element, defining durability of microwave monolitic integrated curcuits switches to the destabilizing factors is a nonlinear element - pin diode.
The influence of the main destabilizing factors (temperature changes and ionizing radiation), inherent to outer space, on the Si pin diodes parameters are considered.
Dependences of the main samples of the microwave monolitic integrated curcuits switches on the SiC pin diodes.
How to cite
Вьюгинов В.Н., Гудков А.Г., Видякин С.И., Кузьмичев Ю.С. МИС СВЧ-переключатель на SiC pin-диодах // Радиотехника. 2016. № 1. С. 110–112.
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