Photogalvanic effect in HgTe/CdTe topological insulator due to edge-bulk optical transitions
- 1 Ph.D. (Phys.-Math.), Junior Research Scientist, Kotelnikov IRE RAS (Moscow)
- 2 Post-graduate Student, Kotelnikov IRE RAS (Moscow)
- 3 Dr.Sc. (Phys.-Math.), Kotelnikov IRE RAS (Moscow)
Abstract
We study theoretically edge-bulk optical transitions in 2D HgTe/CdTe topological insulator (THz range). We show that electron-hole asymmetry results in spin-dependent electric dipole transitions between edge and bulk states, and we predict an occurrence of a circular photocurrent.
How to cite
Асеев П.П., Каладжян В.О., Артеменко С.Н. Фотогальванический эффект вследствие оптических переходов между краевыми и объемными состояниями в топологическом изоляторе HgTe/CdTe // Нелинейный мир. 2016. № 1. С. 12–14.
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