Influence of lattice symmetry on metal-insulator transition in LaMnO<sub>3</sub> epitaxial thin films
- 1 студент 5-го курса, МФТИ; инженер, ИРЭ им. В.А. Котельникова РАН
- 2 к.ф.-м.н., науч. сотрудник, ИРЭ им. В.А. Котельникова РАН
- 3 д.ф.-м.н., зав. лабораторией, ИРЭ им. В.А. Котельникова РАН
Abstract
We observed metal-insulator transition in a temperature range of 150-250 K for thin films of LaMnO3 deposited over cubic substrates. Influence of amplitude and symmetry of lattice distortions appeared due to epitaxial growing of films was studied for various substrates. Resistive properties of LaMnO3 films on SrTiO3 substrate for various film thicknesses were studied. The bulk type of metal conductivity for thin films of LaMnO3 with thickness up to 40 nm was shown.
How to cite
Карпов М.А., Борисенко И.В., Овсянников Г.А. Влияние кристаллической симметрии на переход металл-изолятор в эпитаксиальных пленках LaMnO<sub>3</sub> // Нелинейный мир. 2013. № 2. С. 136–137.
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