Photoluminescence spectral features of mg-doped (Al)GaN epitaxial layers

A.V. Khoteeva; D.R. Sabitov; A.A. Marmalyuk

doi:10.18127/j22250980-202502-05

Photoluminescence spectral features of mg-doped (Al)GaN epitaxial layers

A.V. Khoteeva¹, D.R. Sabitov², A.A. Marmalyuk³

research article UDC 621.315.592.3 Pages: 48-54 doi.org/10.18127/j22250980-202502-05

^1,3 POLYUS Research Institute of M.F. Stelmakh (Moscow, Russia); Patrice Lumumba Peoples' Friendship University of Russia (Moscow, Russia)
² POLYUS Research Institute of M.F. Stelmakh (Moscow, Russia)

Keywords: p-(Al)GaN photoluminescence spectroscopy self-compensation doping Mg

Abstract

Doping of p-GaN epitaxial layers (EL) and p-AlxGa1-xN solid solutions with magnesium impurity is complicated by the self-compensation effect associated with the appearance of donor states in the bandgap at a certain concentration of introduced acceptor atoms. Based on the spectra obtained by the photoluminescence method, it is possible to track the appearance of self-compensation in (Al)GaN:Mg EL and establish the optimal consumption of the introduced magnesium impurity, which allows obtaining a relatively high concentration of the majority charge carriers.

Objective – Study of charge carrier concentration dependence in GaN:Mg and Al0.2Ga0.8N:Mg on Mg dopant flow rates, determination of optimal doping parameters, and investigation of photoluminescence spectral features in the obtained epitaxial structures.
Results: The photoluminescence spectra of GaN:Mg and Al0.2Ga0.8N:Mg samples with varying dopant flow rates were measured. Analysis of these photoluminescence spectra enables determination of optimal growth conditions for p-type (Al)GaN epitaxial structures that avoid self-compensation effects detrimental to charge carrier concentration.

Photoluminescence spectroscopy monitoring of self-compensation effects enables fabrication of high-quality p-(Al)GaN epitaxial structures suitable for optoelectronic device applications.

Received: 24.01.2024
Approved after review: 07.02.2024
Accepted: 04.03.2024

How to cite

Хотеева А.В., Сабитов Д.Р., Мармалюк А.А. Особенности фотолюминесцентных спектров эпитаксиальных слоев (Al)GаN, легированных магнием // Нанотехнологии: разработка, применение – XXI век. 2025. Т. 17. № 2. С. 48–54. DOI: https://doi.org/ 10.18127/ j22250980-202502-05

References

Wang H., Chen A.B. Calculation of shallow donor levels in GaN. Journal of Applied Physics. 2000. V. 87. № 11. P. 7859–7863.
Sang L. et al. Al-rich AlGaN semiconductor materials and their device applications. Ultra-Wide Bandgap Semiconductor Materials. Elsevier. 2019. P. 1–110.
Yan L. et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Applied Physics Letters. 2018. V. 112. №. 18.
Hasan M.S. et al. Analytical investigation of activation energy for Mg-doped p-AlGaN. Optical and Quantum Electronics. 2020. V. 52. P. 1–10.
Kakanakova-Georgieva A. et al. Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD. Physica status solidi (b). 2022. V. 259. № 10. P. 2200137.
Li, D., Jiang, K., Sun, X., Guo, C. AlGaN photonics: recent advances in materials and ultraviolet devices. Advances in Optics and Photonics. 2018. V. 10(1). P. 43.
Xiaowei Z. et al. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films. Journal of Semiconductors. 2009. V. 30. № 4. P. 043002.
Yan Q. et al. Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 2012. V. 100. № 14.
Nayak S., Gupta M., Waghmare U.V., Shivaprasad, S.M. Origin of Blue Luminescence in Mg -Doped GaN. Physical Review Applied. 2019.
Lachab M. et al. Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition. Solid-State Electronics. 2000. V. 44. № 9. P. 1669–1677.
Kaufmann U. et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN. Applied physics letters. 1998. V. 72. № 11. P. 1326–1328.
Qu B.Z. et al. Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2003. V. 21. № 4. P. 838–841.
Shahedipour F., Wessels B.W. On the origin of the 2.8 eV blue emission in p-type GaN: Mg: A time-resolved photoluminescence investigation. MRS Internet Journal of Nitride Semiconductor Research. 2001. V. 6. № 1. P. 12.
Wang J. et al. Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD. Journal of Alloys and Compounds. 2021. V. 870. P. 159477.
Kim K., Harrison J.G. Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal-organic chemical-vapor deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2003. V. 21. № 1. P. 134–139.
Wang J. et al. Origin of blue luminescence in Mg-doped GaN. AIP Advances. 2021. V. 11. № 3. P. 035131.
Nayak S. et al. Origin of blue luminescence in Mg-doped GaN. Physical Review Applied. 2019. V. 11. № 1. P. 014027.
Kinoshita T. et al. High p-type conduction in high-Al content Mg-doped AlGaN. Applied Physics Letters. 2013. V. 102. № 1. P. 012105.
Suzuki M. et al. Photoluminescence and excitation spectrum of Mg-doped p-type AlXGa1–XN. Physica status solidi c. 2009. V. 6. № S2 2. P. S759–S762.
Nakarmi M.L. et al. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys. Applied Physics Letters. 2009. V. 94. № 9. P. 091903.
Makela J. et al. Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN. The Journal of Physical Chemistry C. 2016. V. 120. № 50. P. 28591–28597.
Xu Q. J. et al. Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys. Chinese Physics B. 2020. V. 29. № 5. P. 058103.

[1] Wang H., Chen A.B. Calculation of shallow donor levels in GaN. Journal of Applied Physics. 2000. V. 87. № 11. P. 7859–7863.

[2] Sang L. et al. Al-rich AlGaN semiconductor materials and their device applications. Ultra-Wide Bandgap Semiconductor Materials. Elsevier. 2019. P. 1–110.

[3] Yan L. et al. Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition. Applied Physics Letters. 2018. V. 112. №. 18.

[4] Hasan M.S. et al. Analytical investigation of activation energy for Mg-doped p-AlGaN. Optical and Quantum Electronics. 2020. V. 52. P. 1–10.

[5] Kakanakova-Georgieva A. et al. Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD. Physica status solidi (b). 2022. V. 259. № 10. P. 2200137.

[6] Li, D., Jiang, K., Sun, X., Guo, C. AlGaN photonics: recent advances in materials and ultraviolet devices. Advances in Optics and Photonics. 2018. V. 10(1). P. 43.

[7] Xiaowei Z. et al. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films. Journal of Semiconductors. 2009. V. 30. № 4. P. 043002.

[8] Yan Q. et al. Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 2012. V. 100. № 14.

[9] Nayak S., Gupta M., Waghmare U.V., Shivaprasad, S.M. Origin of Blue Luminescence in Mg -Doped GaN. Physical Review Applied. 2019.

[10] Lachab M. et al. Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition. Solid-State Electronics. 2000. V. 44. № 9. P. 1669–1677.

[11] Kaufmann U. et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN. Applied physics letters. 1998. V. 72. № 11. P. 1326–1328.

[12] Qu B.Z. et al. Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2003. V. 21. № 4. P. 838–841.

[13] Shahedipour F., Wessels B.W. On the origin of the 2.8 eV blue emission in p-type GaN: Mg: A time-resolved photoluminescence investigation. MRS Internet Journal of Nitride Semiconductor Research. 2001. V. 6. № 1. P. 12.

[14] Wang J. et al. Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD. Journal of Alloys and Compounds. 2021. V. 870. P. 159477.

[15] Kim K., Harrison J.G. Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal-organic chemical-vapor deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2003. V. 21. № 1. P. 134–139.

[16] Wang J. et al. Origin of blue luminescence in Mg-doped GaN. AIP Advances. 2021. V. 11. № 3. P. 035131.

[17] Nayak S. et al. Origin of blue luminescence in Mg-doped GaN. Physical Review Applied. 2019. V. 11. № 1. P. 014027.

[18] Kinoshita T. et al. High p-type conduction in high-Al content Mg-doped AlGaN. Applied Physics Letters. 2013. V. 102. № 1. P. 012105.

[19] Suzuki M. et al. Photoluminescence and excitation spectrum of Mg-doped p-type AlXGa1–XN. Physica status solidi c. 2009. V. 6. № S2 2. P. S759–S762.

[20] Nakarmi M.L. et al. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys. Applied Physics Letters. 2009. V. 94. № 9. P. 091903.

[21] Makela J. et al. Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN. The Journal of Physical Chemistry C. 2016. V. 120. № 50. P. 28591–28597.

[22] Xu Q. J. et al. Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys. Chinese Physics B. 2020. V. 29. № 5. P. 058103.

Abstract

How to cite

Related articles