Threshold characteristics of the double gate symmetric MOSFETs nanotransistor with a Gaussian vertical doping profile
- 1 Ph.D. (Phys.-Math.), the Manager Sector, Research Institute for System Studies of RAS, Moscow
Abstract
Approach for 2D simulation of surface potential distribution and threshold voltage for the double gate symmetric SOI CMOS nano-transistor with a vertical Gaussian doping profile in work area is discussed. The model is based on the analytical solution of a 2D Pois-son\'s equation. By means of numerical modeling influence of the steepness of a doping profile and topological transistor parameters on surface potential distribution and threshold voltage is probed. It is received that application of a steep Gaussian doping profile sig-nificantly reduces shift of threshold voltage upon transition to lower topological norms. Results of simulation are in good compliance this received by means of commercially available ATLAS program.
How to cite
Масальский Н.В. Пороговые характеристики двухзатворных симметричных полевых нанотранзисторов с гауссовским вертикальным профилем легирования // Наноматериалы и наноструктуры - XXI век. 2016. № 1. С. 45–51.
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