Nano-sized light emitting silicon structures SOI/N(Ge QDs-Si) in disk resonators

S.M. Sergeev; M.V. Stepikhova; A.V. Novikov; V.A. Verbus; E.V. Skorohodov; J. Schilling

Nano-sized light emitting silicon structures SOI/N(Ge QDs-Si) in disk resonators

S.M. Sergeev¹, M.V. Stepikhova², A.V. Novikov³, V.A. Verbus⁴, E.V. Skorohodov⁵, J. Schilling⁶

research article Pages: 43-46

¹ Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia
^2,3,4,5 Dr.Sc. (Eng.), Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia
⁶ Jun.-Prof. Dr., Martin-Luther-University Halle-Wittenberg, ZIK SiLi-nano, Germany

Keywords: disk resonator microcavity whispering gallery modes micro-photoluminescence light-emitting SOI/Ge(Si) structures

Abstract

This paper presents the results of micro-photoluminescence (micro-PL) studies carried out for disk cavities formed on the basis of light-emitting SOI/n(Ge QDs-Si) structures. The studies were performed at room temperature in the wavelength range of 1.3 - 1.7 mm, which corresponds to a range of the radiative activity of Ge(Si) (Ge QDs) nanoislands containing structures. A resonant response has been observed in micro-PL spectra of the structures studied, which was associated with the whispering gallery modes. The results of theoretical simulations carried out for the microcavities under development together with the quality factors determined for these structures are presented. The quality factors of SOI/n(Ge QDs-Si) disk microcavities with diameters of 30 and 40 μm amount to 300-500.

How to cite

Сергеев С.М., Степихова М.В., Новиков А.В., Вербус В.А., Скороходов Е.В., Шиллинг Й. Наноразмерные светоизлучающие кремниевые структуры SOI/N(Gе QDS-Si) в дисковых микрорезонаторах // Наноматериалы и наноструктуры - XXI век. 2014. № 4. С. 43–46.

References

Vahala K.J. // Nature. 2003. V. 424. R. 839.
Daldosso N., Pavesi L. // Laser & Photon. Rev. 2009. V. 3. № 6. R. 508.
Krasilnik Z.F., Novikov A.V., Lobanov D.N., et al. // Semicond. Sci. Technol. 2011. V. 26.R. 014029.
Lobanov D.N., Novikov A.V., Kudryavtsev K.E., et al. // Semiconductors. 2012. V. 46. № 11. R. 1418.
Ghyselen B., Hartmann J.-M., Ernst T., Aulnette C., et al. // Solid-State Electron. 2004. V. 48. R. 1285.
http://www.comsol.com (data obrashhenija: 25.12.2014)
Vinogradov A.V.,. Oraevskijj A.N. // Sorosovskijj obrazovatelnyjj zhurnal. 2001. № 7(2). S. 96.

[1] Vahala K.J. // Nature. 2003. V. 424. R. 839.

[2] Daldosso N., Pavesi L. // Laser & Photon. Rev. 2009. V. 3. № 6. R. 508.

[3] Krasilnik Z.F., Novikov A.V., Lobanov D.N., et al. // Semicond. Sci. Technol. 2011. V. 26.R. 014029.

[4] Lobanov D.N., Novikov A.V., Kudryavtsev K.E., et al. // Semiconductors. 2012. V. 46. № 11. R. 1418.

[5] Ghyselen B., Hartmann J.-M., Ernst T., Aulnette C., et al. // Solid-State Electron. 2004. V. 48. R. 1285.

[6] http://www.comsol.com (data obrashhenija: 25.12.2014)

[7] Vinogradov A.V.,. Oraevskijj A.N. // Sorosovskijj obrazovatelnyjj zhurnal. 2001. № 7(2). S. 96.