Photomasks design features for nanosized semiconductor VLSI
- 1 вед. специалист, ЗАО «СКАН»
- 2 зам. генерального директора, ЗАО «СКАН»
- 3 генеральный директор, ЗАО «СКАН»
- 4 начальник отдела, ЗАО «СКАН»
Abstract
The paper discusses issues of design technology for the production of photomasks of VLSI nanoscale structures with the use of CAD tools. A designing photomasks route and its place in the general route of VLSI production is described; methods to improve the photomask resolution and photomask design CAD tools are presented. The requirements to CAD systems and their relation to equipment process are formed. Based on these requirements evaluation criteria of quality and productivity of the process of photomasks designing are defined.
How to cite
Корнюхин А.В., Курдюков С.А., Ланцев А.Н., Старилов М.В. Особенности проектирования фотошаблонов для производства наноразмерных полупроводниковых СБИС // Наноматериалы и наноструктуры - XXI век. 2012. № 2. С. 26–35.
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