Improve the reliability of the technology forming the base region of the transistors operational amplifiers
- 1 Student, Department ЭИУ4, Kaluga branch of the Bauman MSTU
- 2 Ph. D. (Eng.), Associate Professor, Department ЭИУ4, Kaluga branch of the Bauman MSTU
- 3 Head of Department ЭИУ4, Kaluga branch of the Bauman MSTU
- 4 Deputy Main Technologist, JSC "VOSHOD"-KRLZ
Keywords:
operational amplifierthe base of the transistorsdiffusionion implantationdefectreliability
Abstract
Discusses the effect of technological regimes on the functional properties of products. The statistical analysis of the obtained married, the main reasons for its occurrence. On the basis of the results of the adjustment process mode.
How to cite
Попова К.В., Адарчин С.А., Косушкин В.Г., Пёрышкин Е.Г. Повышение надежности технологии формирования области базы транзисторов операционных усилителей // Электромагнитные волны и электронные системы. 2017. № 5. С. 30–33.
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