Analysis of the low-resistance contact of the system titanium-nickel with strongly doped silicon of N type
- 1 Senior Lecturer, Kaluga branch of the Bauman MSTU
- 2,4 Student, Kaluga branch of the Bauman MSTU
- 3 Ph. D. (Phys.-Math.), Associate Professor, Kaluga branch of the Bauman MSTU
Abstract
Ohmic contact is one of the most common and important for electronic devices. This article discusses the system is an alternative to aluminum - Ti-Ni. The technological features of deposition of these metals. Shows current-voltage characteristics of the contacts after annealing at various temperatures.
Current-voltage characteristics after isochronous photonic annealing at temperatures ranging from 450° C to 650° C have an unusual shape - of the two straight line sections with different slope to the voltage axis passing smoothly into one another. This can be explained by the fact that there is a formation of two silicon silicide phases (TiSi2), with different values of resistivity. The minimum value of resistivity data contacts occurs without any annealing or after annealing at 700° C.
How to cite
Скипер А.В., Лазарев Н.С., Зайончковский В.С., Расторгуев И.А. Анализ омического контакта системы титанникель с сильно легированным кремнием N-типа // Электромагнитные волны и электронные системы. 2016. № 5. С. 8–10.
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