Thermostability MIS-capacitors based on SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
- 1,2 Junior Research Scientist, Tomsk State University
Keywords:
capacitance-voltage characteristicscurrent-voltage characteristicsMIS-capacitormetal-insulator-semiconductortemperature coefficient of capacitance
Abstract
In this article show a study of the thermostability of MIS-capacitors based on SiO2 and Si3N4 fabricated by the same process route. We measured the capacitance-voltage characteristics at a frequency of 1 MHz and current-voltage characteristics of capacitors at temperatures from -60 to +125°C. We estimated the temperature coefficient of capacitance for the study materials. It was found that at an identical design of the study capacitors, are more thermostable MIS-capacitors based on SiO2. From the current-voltage characteristics capacitor based on of Si3N4 we estimated operating voltage of ≈ 50 V.
How to cite
Олейник В.Л., Копьев В.В. Термостабильность МДП-конденсаторов на основе SiO<sub>2</sub> и Si<sub>3</sub>N<sub>4</sub> // Успехи современной радиоэлектроники. 2016. № 11. С. 245–247.
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