Photoluminescent Diagnostics of Semiconductor Transistor Structures on the Basis of Arsenide Gallium and Its Compounds

Transistor quantum structures AlxGa1-xAs/GaAs/AlxGa1-xAs of a various configuration: modulation-doped structures (MDS) with two-side symmetric doping and double quantum wells structures (DQW), was investigated by photoluminescent spectroscopy. The calculation of the electron energy spectra of these structures in dependence on quantum well widths, doping, spacer layer thickness, and AlAs-barrier thickness was performed. Theoretically and experimentally it was shown that the doping rise affects weakly the transitions energy between the first levels and more strongly affects the transitions between high levels. On the basis of this, the undestroying method of two-dimensional electrons concentration definition in MDS was proposed. The DQW optimum parameters was determined for AlAs-barrier tunnel transparency achievement necessary for electron mobility increase and transistors characteristics improvement. It was established that AlAs-barrier thickness should not exceed 20 and 15 - for wells of width of 65 and 130 - respectively.