A.V. Voitsekhovskii

2016

1. The properties of nanoscale transition layer on the insulator-semiconductor interface in the MIS structures based on MBE n(p)-Hg_1-xCd_xTe (x = 0.21-0.23) with near-surface graded-gap layers and without such layers Наноматериалы и наноструктуры - XXI век, No. 4, 2016 pp. 39-47