S. L. Morugin1, A. V. Pilkevich2
1, 2 Nizhny Novgorod State Technical University n.a. R.E. Alekseev (Nizhny Novgorod, Russia)

1 smorugin@yandex.ru, 2 anton-pi@yandex.ru

The article focuses on the development of an innovative approach to the electrodynamic modeling of small-sized microwave attenuators using macromodels. The research is particularly relevant in the modern context of microelectronics development in the high-frequency and microwave ranges, characterized by rapidly expanding product lines and relatively small production runs.

The primary objective of the study is to develop an effective strategy for designing microwave attenuators based on film resistive structures. The authors propose utilizing macromodels to significantly accelerate the design process through electromagnetic simulation software such as Keysight EEsof EDA and CST Studio Suite, which incorporate built-in interpreters like VBA and Python.

Microwave attenuators play critical roles in modern antenna systems, serving as antenna equivalents during testing, acting as matching elements between the antenna and transmission path, protecting equipment from overloads, and suppressing unwanted harmonics and interference. In high-energy microwave systems operating in the 0…5 GHz range, these devices can effectively dissipate power up to several kilowatts.

The traditional design process requires complex calculations, including electromagnetic, stationary, and non-stationary thermal analyses, as well as mechanical stress assessments. The implementation of macromodels allows for the automation of these processes, significantly reducing the time required for design iterations.

The research introduces a method for optimizing parameters using macromodels that link varying parameters based on simpler relationships than electromagnetic models. This approach enables designers to focus on higher-level tasks without being distracted by routine parameter adjustments.

The results of this research open new perspectives in the field of microwave device design and can be successfully applied in modern telecommunication and radio measurement systems. The proposed approach ensures an optimal balance between design speed and result accuracy, meeting the current requirements of microelectronics development.

The research methodology involves the development of a comprehensive model of the microwave device design process. This model encompasses the analysis of electromagnetic, thermal, and mechanical characteristics. Special attention is paid to optimizing design parameters while considering various constraints and limitations.

The study demonstrates that the use of macro models can substantially reduce design time. These models automate the process of parameter matching when changing various characteristics of the attenuator. The proposed approach to full electromagnetic analysis provides a more effective solution to design problems compared to traditional methods.

Morugin S.L., Pilkevich A.V. Electrodynamic modeling of small-sized microwave attenuators using macromodels. Antennas. 2025. № 5. P. 61–69. DOI: https://doi.org/10.18127/j03209601-202505-06 (in Russian)

1. Erokhin G.A., Chernov O.V., Kozyrev N.D., Kocherzhevskij V.D. Antenno-fidernye ustrojstva i rasprostranenie radiovoln: Uchebnik dlya vuzov. Pod red. G.A. Erokhina. Izd. 3-e. M.: Goryachaya liniya – Telekom. 2007. (in Russian)
2. Kurushin A.A. Proektirovanie SVCh ustrojstv v CST STUDIO SUITE. M.: Solon-Press. 2016. (in Russian)
3. Khaddad B.  AWR Microwave Office. Proektirovanie LTCC-priemoperedatchika Kh-diapazona s antennoj reshetkoj v NI AWR Design Environment. SVCh-elektronika. 2019. № 2. S. 32–42. (in Russian)
4. EDA update improves EM and PA stability analyses and transmission line synthesis. Microwave Journal. 2020. May 13.
5. Sadkov V.D. Raschet T-obraznykh attenyuatornykh plastin dlya sverkhshirokopolosnykh koaksial'nykh i poloskovykh attenyuatorov. Elektronnaya tekhnika. Ser. Elektronika SVCh. 1988. Vyp. 7. S. 24–29. (in Russian)
6. Utkin V.N., Sadkov V.D., Yakimov D.Yu. Raschet T-obraznykh pogloshchayushchikh elementov chip-attenyuatorov dlya poverkhnostnogo montazha. Izvestiya vuzov. Ser. Elektronika. 2008. № 1. S. 86–88. (in Russian)
7. Sadkov V.D., Yakimov D.Yu. Raschet P-obraznykh pogloshchayushchikh elementov chip-attenyuatorov dlya poverkhnostnogo montazha. Izvestiya vuzov. Ser. Radioelektronika. 2009. № 10. S. 76–80. (in Russian)
8. Sadkov V.D., Utkin V.N. Optimal'nyj profil' vkhodnykh kontaktov attenyuatornoj plastiny na osnove raspredelennykh rezistivnykh struktur. Izvestiya vuzov. Ser. Radioelektronika. 2008. № 12. S. 65–67. (in Russian)
9. Sadkov V.D., Fomina K.S., Pil'kevich A.V. Optimizatsiya topologii plenochnykh chip-elementov VCh i SVCh attenyuatorov. Nano- i mikrosistemnaya tekhnika. 2019. № 9. S. 540–545. (in Russian)
10. Butyrskij E.Yu., Kuvaldin I.A., Chalkin V.P. Approksimatsiya mnogomernykh funktsij. Nauchnoe priborostroenie. 2010. T. 20. № 2. S. 82–92. (in Russian)
11. Nussbaumer G. Bystroe preobrazovanie Fur'e i algoritmy vychisleniya svertok. M.: Radio i svyaz'. 1985. (in Russian)
12. Pil'kevich A.V., Sadkov V.D. Optimizatsiya topologii plenochnykh pogloshchayushchikh elementov attenyuatorov s ispol'zovaniem kusochno-odnorodnoj rezistivnoj plenki. Proektirovanie i tekhnologiya elektronnykh sredstv. 2020. № 2. S. 3–7. (in Russian)