N. V. Dudarev – Post-graduate Student, Department of Infocommunication Technologies, South Ural State University (Chelyabinsk) E-mail: dudarevn1993@mail.ru
S. N. Darovskikh – Dr.Sc. (Eng.), Head of Department of Infocommunication Technologies, South Ural State University (Chelyabinsk) E-mail: darovskih.s@mail.ru
The article studies the possibility of modeling of non-contact signal power transmission in the volume-modular diagram-forming device of the microwave range. On the example of a volume strip-slot transition (VSS transition) between the parts of the volumemodular diagram-forming device, the elements of the scattering matrix have been calculated using electrodynamic and electric models. The results of the calculation showed on the one hand practical identity that does not depend on the choice of the model, and on the other hand – the real possibility of using the VSS transition as an element of frequency selective transmission of microwave signal power in the three-dimensional modular diagram-forming devices.
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