S.A. Bagdasaryan - Ph. D. (Eng.), General Director of JSC «Scientific Engineering Center «Technological Developments of Telecommunication and Radio Frequency Identification» (Moscow) E-mail: bagdassarian@mail.ru S.A. Nalimov - Leading Process Engineer, Central Research Technological Institute «Technomash» (Moscow) E-mail: belyanin@cnititm.ru V.V. Borisov - Leading Programmer, Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University E-mail: borvv1947@mail.ru N.I. Sushentsov - Ph. D. (Eng.), Associate Professor, Head of Department, Volga State University of Technology (Yoshkar-Ola) E-mail: sniyola@mail.ru

AlN films grown at low temperatures (370-570 K) of various materials on substrates RF-magnetron reactive sputtering target of Al are explored. By scanning electron microscopy, X-ray diffraction and Raman spectroscopy studied the composition and structure of AlN films. It is shown that the obtained AlN film have the piezoelectric effect. The effect of the structure of the AlN films on the characteristics of devices on surface acoustic waves produced on their basis are presented. With the increase in the degree of crystallinity and the size of the crystallites, as well as by the decrease in the misorientation of the crystallites of AlN films, the insertion loss of SAW devices can be significantly reduced.

 

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