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Journal Science Intensive Technologies №2 for 2017 г.
Article in number:
Spurious oscillation suppression in microwave HIC of power amplifiers outрut stage
Authors:
V.A. Iovdalsky - Dr. Sc. (Eng.), Head of Department, JSC «RPC «Istok» named after Shokin (Fryazino, Moscow reg.); Associate Professor, Moscow Technological University (MIREA) V.P. Marin - Academic APK, Dr. Sc. (Eng.), Professor, Moscow Technological University (MIREA) V.S. Seregin - Dr. Sc. (Eng.), General Director - General Designer, JSC «SPA «NIITAL» (Moscow) I.A. Sokolov - Ph. D. (Eng.), General Director - General Designer, JSC «NII «Micropribor» named after G.J. Guskov (Moscow) V.V. Kuznetsov - Ph. D. (Eng.), Associate Professor, Head of Department of Optics-Electronic Devices and Systems, Moscow Technological University (MIREA)
Abstract:
The solution of the problem of high frequency spurious oscillation suppression in microwave HIC with two-tiered arrangement of Schottky-gate FET crystals by means of decreasing the joint lengths at the expense of combining them into a group of 4 crystals has been reported. An analysis of previous research in the field of high-frequency generation suppression managed to get the HIC, in which the high-frequency generation did not occur at the frequencies 2...6 GHz, as well as to clarify the structure and critical dimensions of the developed microwave HIC for successful suppression of generation already in the process of their creation.
Pages: 20-22
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