350 rub
Journal Science Intensive Technologies №9 for 2015 г.
Article in number:
Analysis of the process quality of the semiconductor injection lasers
Authors:
I.V. Chukhraev - Ph. D. (Eng.), Associate Professor, Kaluga branch of the Bauman MSTU. E-mail: igor.chukhraev@mail.ru V.E. Drach - Ph. D. (Eng.), Associate Professor, Kaluga branch of the Bauman MSTU. E-mail: drach@kaluga.org
Abstract:
Nowadays, the development of electronic equipment is characterized by ever-increasing demands on its quality, which, in turn, is determined not only by the quality of manufacturing processes, but also, vastly by electronic components, such as semiconductor devices. In its turn, the modern manufacture of semiconductor devices is characterized by continuous development of existing and development of new methods for quality control of the individual operations and the entire process as a whole. This is essential not only to detect, but also to prevent the manufacturing defects by statistical methods of quality management, based on a quantitative evaluation of different parameters of the product. The aspects of statistical quality control of the process of semiconductor multimode pulse injection lasers of LPI-101 model is described in this article. Analysis of the quality of the process was based on the pulse duration measurement of the laser radiation. To evaluate the stability and reproducibility of the process, the Shewhart control charts were used. It is shown, that the process of LPI 101 lasers at OJSC «Voskhod»-KRLZ is characterized by stability and reproducibility. In order to maintain the process at the required level, a constant monitoring of the changing distributions of process reproducibility is required. This will ensure the duly taking of preventive and corrective actions aimed at improving product quality and reducing the financial costs of rework.
Pages: 47-50
References

 

  1. Baryshev V.G., Sidorov JU.A., Stoljarov A.A., CHukhraev I.V. Sravnitelnaja ocenka metodov kontrolja defektnosti diehlektricheskikh plenok // EHlektronnaja tekhnika. Serija 6: Materialy. 1990. № 1. S. 72−75.
  2. Patent SU№ 1840164 ot 27.06.2006. Sposob kontrolja kachestva tekhnologicheskogo processa izgotovlenija MDP-IS / Baryshev V.G., Stoljarov A.A., Sidorov JU.A., CHukhraev I.V.
  3. CHukhraev I.V. Povyshenie operativnosti upravlenija tekhnologicheskim processom poluchenija podzatvornogo diehlektrika MDP-IS. Dis. - kand. tekhn. nauk. Kaluga: 2002. 172 s.
  4. Drach V.E. Issledovanie temperaturnojj zavisimosti generacii polozhitelnogo zarjada v termicheskikh plenkakh SiO2 MDP-struktur v uslovijakh upravljaemojj silnopolevojj inzhekcii ehlektronov. Dis. - kand. tekhn. nauk. Kaluga: 2005. 185 s.
  5. Drach V.E., Loskutov S.A., CHukhraev I.V. Perspektivnye metody kontrolja zarjadovojj nestabilnosti podzatvornogo diehlektrika MDP-priborov // Nauka i obrazovanie: ehlektronnoe nauchno-tekhnich. izdanie. 2012. № 4. S. 53.
  6. Drach V.E., CHukhraev I.V. Metodika monitoringa generacii zarjada v nanorazmernom diehlektrike MDP-tranzistora // Nauka i obrazovanie: ehlektronnoe nauchno-tekhnich. izdanie. 2012. № 2. S. 53.
  7. Kljachkin V.N. Statisticheskie metody v upravlenii kachestvom: kompjuternye tekhnologii: Ucheb. posobie dlja vuzov. M.: INFRA-M. 2009. 304 s.
  8. Ajjkhler JU., Ajjkhler G.I. Lazery. Ispolnenie, upravlenie, primenenie / Per. s nem. L.N. Kazancevojj. Moskva. 2012. Ser. II‑25. Mir fiziki i tekhniki. 496 s.
  9. EHlektronnyjj resurs http://lasers.org.ru/.
  10. EHlektronnyjj resurs http://www.voshod-krlz.ru/.
  11. GOST R 50779.42-99. Statisticheskie metody. Kontrolnye karty SHukharta. M.: Standartinform. 2008.
  12. Ponomarev S.V., Mishhenko S.V., Belobragin B.JA., Samorodov V.A., Gerasimov B.I., Trofimov A.V., Pakhomova C.A., Ponomareva O.S. Upravlenie kachestvom produkcii. Instrumenty i metody menedzhmenta kachestva: ucheb posobie. M.: RIA «Standarty i kachestvo». 2005. 248 s.
  13. GOST R 50779.46-2012 Statisticheskie metody. Upravlenie processami. CHast 4. Ocenka pokazatelejj vosproizvodimosti i prigodnosti processa. M.: Standartinform. 2014.