O.R. Abdullaev - Ph.D. (Eng.), Vice-Director on R&D, JSC «Optron». E-mail: abd@optron.ru
A.S. Drenin - Senior Engineer of Design Department, JSC «Optron». E-mail: dasnew@mail.ru
A.S. Laryushkin - Ph.D. (Eng.), Head of Chip Manufacturing Department, JSC «Optron»
E.S. Rogovskiy - Senior Engineer, JSC «Optron». E-mail: skb-optron@mail.ru
M.Yu. Filatov - Ph.D. (Eng.), Vice-Director of Design Department, JSC «Optron». E-mail: skb-optron@mail.ru

Presented structure allows to use the diode at high input voltages. The results of device operation in the 2-cm-range clamping diode topology suggest the insufficient accuracy of physical topological model used for this work [3] which correlates carrier saturation velocity with operation time of signal voltage positive half-wave for estimation of clamping diode base thickness.

 

1. Val'd-Perlov V.M., Vejcz V.V., Ivashhenko N.G. Moshhny'j by'strodejstvuyushhij ogranichitel'ny'j diod dlya zashhity' priemny'x kanalov PPMAFAR // E'lektronnaya texnika. Seriya 2. Poluprovodnikovy'e pribory'. 2010. Vy'p. 1 (224). S. 113-117.
2. Sposob izgotovleniya poluprovodnikovy'x ogranichitel'ny'x diodov SVCh diapazona gruppovy'm metodom [Tekst] : zayavka na patent Ru 2452057S1 / Averkin S.N., Kolmakova T.P., Filatov M.Ju.; zayavl. 17.02.2011.
3. Shnitnikov A.S. Osobennosti proektirovaniya sverxshirokopolosny'x diodny'x SVCh ogranichitelej // Sb. tr. uchastnikov 15 Mezhd. Kry'mskoj konf. «SVCh i telekommunikaczionny'e texnologii» (Sevastopol', 12-16 sentyabrya 2005 g.). Kry'm. 2005. S. 451-452.