S.B. Benevolenskiy, E.V. Zhalnova, V.I. Kubrin, E.V. Marsova

This paper describes optimization of the equipment for vacuum-plasma processes occurring in the magnetron reactor for etching materials in low-temperature plasma. The main difference between author-s approach and existing ones lays in the improved design of the magnetron reactor with closed electron drift around the electrode substrate. Improvement of the technology of processing materials for electronic devices is associated with the development of promising technological equipment. Magnetron plasma chemical reactors can significantly improve productivity and quality of treatment at the expense of the process under reduced pressure and higher power density compared to the bulk, and diode planar reactor. We consider the upgrading of equipment for vacuum-plasma processes in general and magnetron reactor for etching of materials in low-temperature plasma in particular. The design of the magnetron reactor with the discharge around the electrode-substrate provides a power density of the discharge up to 3 W/cm at the maximum power supply high-frequency generator ICP-2,5/13-SD-L01 2,5 kW. Minimum resulting operating pressure in the reactor, at which the burning of the discharge is steady is 0.5 Pa. A distinctive feature of this reactor is the absence of mechanical moving magnetic system, which greatly simplifies the design. The paper presents the results of original research that is credible, as evidenced by the use of classical approaches. Style of presentation is clear, using generally accepted scientific and technical terms. In connection with the above stated, we can conclude that the subject of the article is relevant, results are not scientific novelty and practical importance