350 rub
Journal Science Intensive Technologies №9 for 2011 г.
Article in number:
The influence of valence band shift on piezoresistive effect in p-conductivity diamond structures
Keywords: piezoresistive effect valence band split-off strain
Authors:
Aung Thura, S.V. Rybkin
Abstract:
The simulation of uniaxial deformation in diamond crystals along [001] influence on light and heavy holes bands shifting relative to the valence split-off band was carried out. The corresponding variations in concentration of charge carriers in bands as well as accompany piezoresistive effect amendments were calculated. It was shown, that in diamond crystals, unlike the silicon and germanium semiconductor strain-sensing elements, the distance between the split-off band for light and heavy holes is shot and it-s value responds to 6-10-6 eV. The results obtained are in good correspondence with known experimental data.
Pages: 58-60
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