R.I. Zudov – Assistant, Peter The Great St. Petersburg Polytechnic University

V.A. Sorotsky – Dr.Sc.(Eng.), Professor, Associate Professor, Peter The Great St. Petersburg Polytechnic University

The paper deals with some features of designing switch mode power amplifiers of the HF band. Based on this, the requirements for electron devices are defined. The properties of semiconductor materials used in production of power switching transistors are analyzed. It is shown that high-power MOSFETs made of new materials are able to provide high efficiency in power amplifiers of the HF band.

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