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Journal Radioengineering №7 for 2017 г.
Article in number:
Influence of non-lithographic nanostructuring and modification of a surface on the field emission properties of silicon lot edgecathodes
Type of article: scientific article
UDC: 537.533.2
Authors:

R.K. Yafarov – Dr. Sc. (Eng.), Professor, Saratov branch of Kotel'nikov IRE of RAS

E-mail: pirpc@yandex.ru

S.Yu. Suzdaltsev – Ph. D. (Eng.), Saratov branch of Kotel'nikov IRE of RAS

E-mail: suzdaltsevsy@rambler.ru

V.Ya. Shanygin – Saratov branch of Kotel'nikov IRE of RAS

E-mail: vitairerun@mail.ru

Abstract:

Field emission characteristics of field sources of electrons received with the use of atomic structure of crystals of silicon, processes of heterophase vacuum and plasma self-organization of insular carbon coverings and high-anisotropic plasmochemical etching under the conditions of weak adsorption are investigated. The interrelation of morphological and field emission characteristics of autocathodic microstructures on crystals of silicon of various types of conductivity is established. Results of pilot studies are interpreted with the use of representations of Fowler-Nordheim in interrelation with changes of structures of superficial phases in processes of receiving the emitting of silicon ledges.

Pages: 53-59
References
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  2. Yafarov R.K. // FTP. 2015. T. 49. № 3. S. 329−335.
  3. Yafarov R.K., Shany'gin V.Ya. // FTP. 2017. T. 51. № 4. S. 558−562.
  4. Fei Zhao, Jian-hua Deng, Dan-dan Zhao, Ke-fan Chen, Guo-an Cheng, Rui-ting Zheng. // Journal of Nanoscience and Nanotechnology. 2010. 10. P. 1−5.
Date of receipt: 28 июня 2017 г.