Ya.V. Turkin - Post-graduate Student, Yuri Gagarin State Technical University of Saratov. E-mail: turkin.yaroslav@gmail.com A.A. Zaharov - Dr. Sc. (Eng.), Professor, Head of Department «Electronic devises and equipment», Yuri Gagarin State Technical University of Saratov. E-mail: zaharov@sstu.ru A.A. Shvachko - Post-graduate Student, Yuri Gagarin State Technical University of Saratov. E-mail: alexandr1899@gmail.com

Analytical model of I V characteristic of magnetic tunnel junction has been developed. Resistance of the three-layer structures is cal-culated using Slonczewski formula. This formula includes mean conductivity and tunneling magnetoresistance of magnetic tunneling junction. Mean conductivity has been calculated from the Brinkman model for small values of external voltage. Slonczewski theory is used to calculate zero-voltage conductance. Tunneling magnetoresistance has been calculated numerically from Tsu-Esaki formula for spin-dependent tunneling in layered structure. Dependence of tunneling magnetorseistance on external voltage is numerically approximated with third order interpolation polynomial. Conductance of three-layer structure as a function of voltage and angle between magnetization vectors is obtained through substitution of calculated expressions into Slonczewski formula. After integrating conductance function over voltage, we obtain explicitly of I V characteristic for magnetic tunnel junction. This I-V characteristic is expressed as a power series of the external voltage.

 

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