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Journal Radioengineering №7 for 2016 г.
Article in number:
Analytical estimation of the parameters of optoelectronic device based on FTIROS
Authors:
V.B. Baiburin - Dr. Sc. (Phys.-Math.), Professor, Department «Information security of automated systems», Yuri Gagarin State Technical University of Saratov, Honored Scientist of RF, Academic of RANS. E-mail: baiburinvb@rambler.ru V.P. Meschanov - Dr. Sc. (Eng.), Professor, Director of NIKA-Microwave, Ltd (Saratov), Honored Scientist of RF. E-mail: nika373@bk.ru V.A. Kuznetsov - Ph. D. (Phys.-Math.), Associate Professor, Department of Engineering Physics, Saratov State Agro University named after N.I. Vavilov. E-mail: kuznetsov.va1948@yandex.ru
Abstract:
Mathematical modeling of thermodynamic process for determining parameters of optical indicators based on FTIROS was carried out. The value of the energy barrier for semiconductor - metal phase transition in the FTIROS material has been estimated. The efficiency and entropy change for the semiconductor - metal phase transition of this material has been estimated with the help of Carno-s diagram.
Pages: 21-24
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