V.N. Vyuginov - Ph. D. (Phys.-Math.), Director of Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: vyuginov@svetlana-ep.ru A.G. Gudkov - Dr. Sc. (Eng.), Professor, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University A.A. Zybin - Head of Laboratory, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: zybin_aa@svetlana-ep.ru P.A. Shaganov - Design Engineer, Svetlana-Elektronpribor CSC (Saint-Petersburg). E-mail: shaganov_wrk@mail.ru S.I. Vidyakin - Post-graduate Student, Department «Technology of Instrument Engineering», Bauman Moscow State Technical University. E-mail: bmsturl@gmail.com

Microwave solid state amplifiers are the most important semiconductor devices, defining the main characteristics of the modern ra-dioelectronic equipment (accuracy and range of the dynamic range, reliability, noise immunity, cost and efficiency). It is necessary to determine a functional characteristics kinetics of a low noise amplifier for the successful design and operation of the radioelectronic equipment of the civilian and military appointment in the conditiond of the external factors influence. There are an investigation of the functional characteristics changes of a low noise amplifier under the influence of temperature changes with helping of a math modeling in particular CAD AWRDE Microwave Office programs. The relative changes of the functional characteristics electrical parameters of a low noise amplifier at the fixed frequency in result of influence of the environment temperature are studying. In the issue, temperature changes influence on the low noise amplifier adjustment more than on the noise and amplifier coefficient.

 

1. Gudkov A.G., Kirpichenkov A.I., Kozlov P.S. Prognozirovanie kachestva i nadezhnosti GIS i MIS SVCH na ehtapakh razrabotki i proizvodstva. CHast 30. EHlementnaja baza tranzistornykh MSHU v MIS. Mashinostroitel. 2012. № 8. S. 15−18.
2. Arykov V.S., Barov A.A., Kondratenko A.V. Monolitnaja integralnaja skhema maloshumjashhego usilitelja diapazona 8-12 GGc na osnove GaAspHEMT-tekhnologii // Materialy dokladov Mezhdunar. nauchno-prakticheskojj konf. «EHlektronnye sredstva i sistemy upravlenija»  (10−11 nojabrja 2011). Tomsk: V‑Spektr. 2011. S. 53−57.
3. Kozlovskijj EH.JU., Seleznev B.I. Modelirovanie SVCH maloshumjashhego pHEMT tranzistora s primeneniem SAPR MicrowaveOffice // Vestnik NovGU. Ser. Tekhnicheskie nauki. 2012. № 68. S. 41−45.
4. Quay R.et al. Efficient AlGaN/GaN HEMT Power Amplifiers // Proceedings of the 3rd European Microwave Integrated Circuits Conference. Amsterdam. Oct. 2008. P. 87.