A.M. Bobreshov, A.V. Ivantsov, I.S. Korovchenko, V.A. Stepkin, G.K. Uskov

Using the ultra-wide band signals becomes topical in electronics at present. This kind of signal, which is carrier for data bulk, provides high communications security. However, ultra-wide band signals in one system also can be the interference for another one. Ultra-short pulses are cite as an example of such signal. Well known, the ultra-short pulse series are the most danger for semiconductor devices. It can reduce functional parameters of devices. The computer-aided measuring test bench for investigation of electromagnetic capability characteristic of low-noise amplifier under sub-nanosecond pulse series exposure is described in this paper. Investigations are performed in operating mode of semiconductor device with ultra-short pulses interference-s presence. In experiment general functional parameters of the device is measured, then the changes of these parameters under ultra-short pulses explosion are analyzed. Obtained algorithms of measurements and calculations are described in article. For optimization of devices under exposure of different types interferences exposure in test bench structure connection a proper signal generator or other suitable unit are provided.