M.S. Shevchenko1, L. V. Filippenko2, V.P. Koshelets3

1-3 Kotelnikov IRE of RAS (Moscow, Russia)

1 Moscow Institute of Physics and Technology (Dolgoprudny, Russia)

3 Institute for Physics of Microstructures of RAS (Moscow, Russia)

This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured.

Shevchenko M.S., Filippenko L.V., Koshelets V.P. Josephson tunnel junctions with integral SIN shunting. Nonlinear World. 2022. V. 20. № 3. P. 66-71. DOI: https://doi.org/10.18127/j20700970-202203-08 (In Russian)

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